%0 Journal Article
%T The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses
%A Wang Yan-Gang
%A Xu Ming-Zhen
%A Tan Chang-Hu
%A Zhang JF
%A Duan Xiao-Rong
%A <br>王彦刚
%A 许铭真
%A 谭长华
%A J.F.Zhang
%A 段小蓉
%J 中国物理 B
%D 2005
%I 
%X The conduction mechanism of stress induced leakage current (SILC) through 2{nm} gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.
%K stress induced leakage current
%K oxygen-related donor-like defects
%K trap-assisted tunnelling
%K ultra-thin gate oxide<br>电压传导装置
%K 电压常量
%K 仿真模型
%K 电场
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=0B7E70D364E4CDD74C56C9118E83D9D9&yid=2DD7160C83D0ACED&vid=F3583C8E78166B9E&iid=9CF7A0430CBB2DFD&sid=0BEF78F5D55A0862&eid=E7AA5D9F9796332E&journal_id=1009-1963&journal_name=中国物理&referenced_num=1&reference_num=19