%0 Journal Article
%T Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
%A Chen Wei-Bing
%A Xu Jing-Ping
%A Lai Pui-To
%A Li Yan-Ping
%A Xu Sheng-Guo
%A Chan Chu-Lok
%A <br>陈卫兵
%A 徐静平
%A 黎沛涛
%A 李艳萍
%A 许胜国
%A 陈铸略
%J 中国物理 B
%D 2006
%I 
%X The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O2 ambience, followed by an annealing in different gas ambiences of N2, NO and NH3 at 600℃ for 2 min. Capacitance--voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si \equiv \!\!\equivN bonds to passivate dangling Si bonds and replace strained Si--O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability.
%K metal-oxide-semiconductor capacitors
%K HfTiON
%K capacitance--voltage characteristics
%K leakage current
%K interlayer<br>金属氧化物半导体电容
%K HfTiON
%K 电容-电压特性
%K 泄漏电流
%K 夹层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=51C70EC83730C717A7F22D9966BC58C4&yid=37904DC365DD7266&vid=23CCDDCD68FFCC2F&iid=5D311CA918CA9A03&sid=ADEE850E40E2F1AA&eid=8240BC26394E1210&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=22