%0 Journal Article
%T Tight-binding calculation of the electronic states of bulk-terminated GaAs(311)A and B surfaces<br>Tight—binding calculation of the electronic states of bulk—terminated GaAs（311）A and B surfaces
%A Jia Yu
%A Ma Bing-Xian
%A Yao Qian-Kai
%A Tang Ming-Sheng
%A <br>贾瑜
%A 马丙现
%A 姚乾凯
%A 唐明生
%J 中国物理 B
%D 2002
%I 
%X We have carried out theoretical investigations on the electronic structure of GaAs(311)A and GaAs(311)B surfaces. The bulk electronic structure of GaAs has been described by the second-neighbour tight-binding formalism and the surface electronic structure was evaluated via an analytic Green function method. First, we present the surface band structure together with the projected bulk band of both Ga-terminated and As-terminated for GaAs(311)A and GaAs(311)B surfaces, respectively. In each case, the number of surface states is determined, and the localized surface features and orbital properties of these surface states along Γ-Y-S-X-Γ high symmetry lines of the surface Brillouin zone are discussed. For the Ga-terminated GaAs(311)A (1×1) surface, we have tested two possible structure models, i.e. "the bridge site" and "the hollow site" models. In comparison with the angle-resolved photoelectron spectroscopy studied recently, the results have shown that the surface electronic states of the hollow site model are in good agreement with the experiments, whereas those of the bridge site model are not. So we have concluded that the hollow site model is favourable for the Ga-terminated GaAs(311) (1×1) surface and the bridge site model should be excluded.
%K tight-binding calculation
%K high-index crystal surface
%K surface states
%K resonance states<br>Ⅲ－V化合物半导体
%K 电子态
%K 计算
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=322B662CB9AA15134B8E15EA0AE160B9&yid=C3ACC247184A22C1&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=9FFCC7AF50CAEBF7&eid=8BD23BD67BF01A5C&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0