%0 Journal Article
%T A compact I－V model for lightly-doped-drain MOSFETs
%A 于春利
%A 杨林安
%A 郝跃
%J 中国物理 B
%D 2004
%I 
%X A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the I－V characteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=B4E7D8BB1BC1597478DCEF46C8C79B5E&yid=D0E58B75BFD8E51C&vid=FC0714F8D2EB605D&iid=DF92D298D3FF1E6E&sid=E26AA41AE15D3061&eid=8DABBEB130EFF191&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0