%0 Journal Article
%T Investigation of the a-Si:H films by using thermal and light-induced annealing treatment in atomic hydrogen atmosphere in H-W-ECR CVD system<br>用H-W-ECR CVD系统实现氢化非晶硅薄膜在氢气环境下同时进行化学热退火和光诱导退火的研究
%A Hu Yue-Hui
%A Zhu Xiu-Hong
%A Chen Guang-Hu
%A Rong Yan-Dong
%A Li Ying
%A Song Xue-Mei
%A Zhou Huai-En
%A Gao Zhuo
%A Ma Zhan-Jie
%A Deng Jin-Xiang
%A <br>胡跃辉
%A 朱秀红
%A 陈光华
%A 荣延栋
%A 李瀛
%A 宋雪梅
%A 周怀恩
%A 高卓
%A 马占杰
%A 邓金祥
%J 中国物理 B
%D 2005
%I 
%X To Investigate the stability of hydrogenated amorphous silicon (a-Si:H) films, the thermal and light-induced annealing treatment in an atomic hydrogen atmosphere (TLAH) is carried out by using a new hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition system (H-W-ECR CVD) modified from a conventional microwave electronic cyclotron resonance chemical vapor deposition system (MWECR CVD). In order to compare with the TLAH method, the experiments of thermal annealing, and thermal and light-induced annealing are also performed. Meanwhile, for the purpose of analysing the photoconductivity degradation quantitative, the photoconductivity degradation is assumed to obey the extended exponential law: 1/$\sigma _{\rm ph}$=1/$\sigma _{\rm s}$-(1/$\sigma _{\rm s}$-1/$\sigma _{0})\exp-(t/\tau )^{\beta }$], where the extended exponential $\beta $ and the time constant $\tau $ are gained by the slope and the intercept of the line according to the linear relationship between $\ln \left( { - \ln \left( {\dfrac{\sigma _{\rm s}^{ - 1} - \sigma _{\rm ph}^{ - 1} }{\sigma _{\rm s}^{ - 1} - \sigma _0^{ - 1} }} \right)} \right)$ and ln$t$, deduced from the extended exponential law; the photoconductivity saturation value $\sigma _{\rm s}$ can be obtained by Gaussian fitting according to the relationship between photoconductivity and light-soaking time in the logarithmic coordinate system. The experimental results show that the TLAH can improve the stability, microstructure and opto-electronic properties of the annealed a-Si:H films, obviously decrease their optical band gaps, and remarkably move their photoluminescence spectrum (PL) peaks toward low energies.
%K stability of a-Si:H thin film
%K TLAH
%K extended exponential law<br>a-Si:H薄膜的稳定性，TLAH，扩展指数规律
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=3A4BB11EA45DE48ABE83E5FE6F1B4F97&yid=2DD7160C83D0ACED&vid=F3583C8E78166B9E&iid=DF92D298D3FF1E6E&sid=8D2AA7F1A00E26D5&eid=AA2E209AD442C5CC&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=18