%0 Journal Article
%T Investigation of the growth process of Si nanowires using the vapour－liquid－solid mechanism
%A 邢英杰
%A 俞大鹏
%A 奚中和
%A 薛增泉
%J 中国物理 B
%D 2002
%I 
%X Silicon nanowires have been grown by the thermal decomposition of silane via the vapour－liquid－solid (VLS) mechanism. Three different stages of VLS growth (eutectic alloy formation, crystal nucleation and unidirectional growth) were studied separately using a scanning electron microscope and a high-resolution transmission electron microscope. Very short silicon nanowires prepared under particular conditions provide direct evidence of the VLS mechanism on a nanometre scale. Our results will be very helpful for the controllable synthesis of Si nanowires.
%K nanowires
%K vapour－liquid－solid
%K mechanism
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=BC74621359735B3860E9A4E50776AC9C&yid=C3ACC247184A22C1&vid=708DD6B15D2464E8&iid=F3090AE9B60B7ED1&sid=1EA033F7E0CC5F25&eid=208AC7DC28BD1EC6&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0