%0 Journal Article
%T A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films<br>A comparative study of electroluminescence from Ge／SiO2 and Si／SiO2 films
%A Ma Shu-Yi
%A Chen Hui
%A Xiao Yong
%A Ma Zi-Jun
%A Sun Ai-Min
%A <br>马书懿
%A 陈辉
%A 萧勇
%A 马自军
%A 孙爱民
%J 中国物理 B
%D 2004
%I 
%X Ge/SiO_2 and Si/SiO_2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed.
%K electroluminescence
%K Ge/SiO_2 film
%K Si/SiO_2 film<br>锗／二氧化硅薄膜
%K 硅／二氧化硅薄膜
%K 双靶磁控溅射技术
%K 电致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=728E0EFF4B5A90EA7AB959AF25CE12ED&yid=D0E58B75BFD8E51C&vid=FC0714F8D2EB605D&iid=0B39A22176CE99FB&sid=7ABC4505E3960D2B&eid=866F8A6B640835A7&journal_id=1009-1963&journal_name=中国物理&referenced_num=1&reference_num=13