%0 Journal Article
%T ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING, OXYGEN DOPING AND HIGH PRESSURE
%A 吕劲
%A 章立源
%A 郝学军
%J 中国物理 B
%D 1997
%I 
%X The effects of Pb doping, oxygen doping (δ= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg0.8Pb0.2Ba2Ca2Cu3O8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO2 layers. The optimal δ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed Tc(P) by Pb substitution has to be described in the modified Neumeier's model.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=86A18D562B9454FCADFC429B7DE9EC0E&yid=5370399DC954B911&vid=B31275AF3241DB2D&iid=CA4FD0336C81A37A&sid=1371F55DA51B6E64&eid=987EDA49D8A7A635&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0