%0 Journal Article
%T FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GaAs<br>
%A CHEN ZHONG-HUI
%A LIU PU-LIN
%A ZHOU TAO
%A SHI GUO-LIANG
%A LU WEI
%A HUANG XING-LIANG
%A SHEN XUE-CHU
%A <br>
%J 中国物理 B
%D 1994
%I 
%X We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been performed on high purity n-GaAs at 4.2K. Except for photothermal ionization process, a new far-infrared photoconductivity (FIRPC) mechanism is observed. This photo ionization process is assisted by impact ionization and depends on external electric field. This new mechanism originates from photo-field ionization.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=E37DB8D54E5184180B9E944E8EA9BBE8&yid=3EBE383EEA0A6494&vid=38B194292C032A66&iid=B31275AF3241DB2D&sid=FB36B1C076A263FA&eid=3389C664025A98F9&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0