%0 Journal Article
%T THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL
%A 贾全杰
%A 郑文莉
%A 王洲光
%A 王俊
%A 姜晓明
%A 蒋最敏
%A 裴成文
%A 秦捷
%A 胡冬枝
%J 中国物理 B
%D 1998
%I 
%X The distribution of Sb atoms in δ-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=88CCB26754BACDA8847D095FF516AF99&yid=8CAA3A429E3EA654&vid=DF92D298D3FF1E6E&iid=9CF7A0430CBB2DFD&sid=08B2E838F29A693A&eid=6C3EA4F7B6E5F836&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0