%0 Journal Article
%T STUDY OF IRON OVERLAYER ON SULPHUR PASSIVATED GaAs(100) BY SYNCHROTRON RADIATION PHOTOEMISSION<br>
%A Zhu Chuan-gang
%A Xu Peng-shou
%A Xu Fa-qiang
%A Lu Er-dong
%A Pan Hai-bin
%A Guo Hong-zhi
%A <br>
%J 中国物理 B
%D 1998
%I 
%X We have studied the interface electronic structures and the chemical reaction of the Fe overlayer deposited on S-passivated GaAs(100). The chemical bond and electronic structure are different from Fe/GaAs, and the reaction between As and Fe is weakened by S atoms. This is beneficial to the magnetism in the interface. In the first stage of deposition, Fe clusters is form near S atoms due to the large electronegativity of S. The S atoms remain at the interface with Fe coverage. Magnetic ordering feature is found at a coverage higher than 0.6 nm. According to the large exchange splitting in valence band spectra, we suggest that Fe phase transition from bcc to fcc occurs with increasing coverage.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=2AE080AA86324F79D240A64B87C64BBF&yid=8CAA3A429E3EA654&vid=DF92D298D3FF1E6E&iid=F3090AE9B60B7ED1&sid=8A6D8366EA57F0FF&eid=895BB10EB8F3BD49&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0