%0 Journal Article
%T ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL<br>
%A DONG WEN-FU
%A YANG QIN-QING
%A LI JIAN
%A WANG QI-MING
%A CHUI QIAN
%A ZHOU JUN-MING
%A HUANG QI
%A <br>
%J 中国物理 B
%D 1996
%I 
%X Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=A2456E2FBF835CE23457E6FA6C9F3530&yid=8A15F8B0AA0E5323&vid=94C357A881DFC066&iid=B31275AF3241DB2D&sid=522844664D9E629A&eid=8C5DE51F0A009A0F&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0