%0 Journal Article
%T PHOTOLUMINESCENCE AND RAMAN SCATTERING OF PURE GERMANIUM/SILICON SHORT PERIOD SUPERLATTICE<br>
%A Ji Zhen-guo
%A Norikata Usami
%A H Sunamura
%A Yasuhiro Shiraki
%A <br>
%J 中国物理 B
%D 1998
%I 
%X Pure Ge/Si short period superlattice (SPS) samples grown by gas source molecular beam epitaxy (GS-MBE) were studied by photoluminescence and Raman scattering. For SPS samples with Germanium layer thickness (LGe) of 1.5 monolayer (ML), a new band of photoluminescence is observed for silicon layer thickness (LSi) in an intermediate range of 1.9-2.9 nm. In contrast to pure Ge/Si quantum wells, the energy of the new band shows a red-shift with the increase of LSi. Raman scattering results show that when the intensity of the photoluminescence of the new band reaches a maximum, the Raman shift relating the vibration of Si-Si reaches a minimum. It is therefore considered that the new band of the pure Ge/Si SPS is related with some kind of strain relaxation process.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=CD8D6A6897B9334F09D8D1648C376FB4&aid=A0DE6FD2AEC51E1EEF7D9DBBEE7D1986&yid=8CAA3A429E3EA654&vid=DF92D298D3FF1E6E&iid=5D311CA918CA9A03&sid=C7B13290323C226E&eid=EF9E84B2DA79FF23&journal_id=1009-1963&journal_name=中国物理&referenced_num=0&reference_num=0