%0 Journal Article
%T A Novel Design and Fabrication of Magnetic Random Access Memory Based on Nano-ring-type Magnetic TunnelJunctions<br>A Novel Design and Fabrication of Magnetic Random Access Memory Based on Nano-ring-type Magnetic Tunnel Junctions
%A XFHan
%A HXWei
%A ZLPeng
%A HDYang
%A JFFeng
%A GXDu
%A ZBSun
%A LXJiang
%A QHQin
%A MMa
%A YWang
%A ZCWen
%A DPLiu
%A WSZhan
%A <br>X.F.Han
%A H.X.Wei
%A Z.L.Peng
%A H.D.Yang
%A J.F.Feng
%A G.X.Du
%A Z.B.Sun
%A L.X.Jiang
%A Q.H.Qin
%A M.Ma
%A Y.Wang
%A Z.C.Wen
%A D.P.Liu and W.S.Zhan State Key Laboratory of Magnetism
%A Beijing National Laboratory for Condensed Matter Physics
%A Institute of Physics
%A Chinese Academy of Science
%A Beijing
%A China
%J 材料科学技术学报
%D 2007
%I 
%X Nano-ring-type magnetic tunnel junctions (NR-MTJs) with the layer structure of Ta(5)/Ir22Mn78(10)/Co75Fe25(2)/Ru(0.75)/Co60Fe20B20(3)/Al(0.6)-oxide/Co60Fe20B20(2.5)/Ta(3)/Ru(5) (thickness unit: nm)were nano-fabricated on the Si(100)/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography (EBL) and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance (TMR & R) versus driving current (I) loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co60Fe20B20 layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both 1 NR-MTJ+1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.
%K Nano-ring-type magnetic tunnel junctions
%K NR-MTJ
%K MRAM
%K spin polarization
%K Spin transfer effect<br>纳米环形磁性隧道结
%K 自旋极化
%K 磁性随机存取存储器
%K 设计
%K 制造
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=BC53EB141F3EEB10&yid=A732AF04DDA03BB3&vid=EA389574707BDED3&iid=38B194292C032A66&sid=8ED630AD8C61FAE8&eid=31BCE06A2FD82A16&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=11