%0 Journal Article
%T Preparation of Porous GaN Buffer and Its Influence on the Residual Stress of GaN Epilayers Grown by Hydride Vapor Phase Epitaxy
%A Xinhua LI
%A Kai QIU
%A Fei ZHONG
%A Zhijun YIN
%A Changjian JI
%A Yuqi WANG
%A <br>Xinhua
%A LI
%A Kai
%A QIU
%A Fei
%A ZHONG
%A Zhijun
%A YIN
%A Changjian
%A JI
%A Yuqi
%A WANG
%J 材料科学技术学报
%D 2007
%I 
%X The preparation of porous structure on the molecular beam epitaxy (MBE)-grown mixed-polarity GaN epilayers was reported by using the wet chemical etching method. The effect of this porous structure on the residual stress of subsequent-growth GaN epilayers was studied by Raman and photoluminescence (PL) spectrum.Substantial decrease in the biaxial stresse can be achieved by employing the porous buffers in the hydride vapour phase epitaxy (HVPE) epilayer growth.
%K GaN
%K Hydride vapour phase epitaxy
%K Porous buffer<br>多孔渗水缓冲器
%K 氢化物蒸汽相外延
%K 残差应力
%K 薄膜激片
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=B0597175E8E8BDCF&yid=A732AF04DDA03BB3&vid=EA389574707BDED3&iid=E158A972A605785F&sid=F6467E7C54ED952D&eid=39E48869A719B9DE&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=18