%0 Journal Article
%T Electrical Properties of Sputter-deposited ZrO2-based Pt/ZrO2/Si Capacitors
%A Keunbin YIM
%A Yeonkyu PARK
%A Anna PARK
%A Namhee CHO
%A Chongmu LEE
%A <br>Keunbin
%A YIM
%A Yeonkyu
%A PARK
%A Anna
%A PARK
%A Namhee
%A CHO
%A Chongmu
%A LEE
%J 材料科学技术学报
%D 2006
%I 
%X Pt/ZrO2/Si sandwich structures where ZrO2 is deposited by radio frequency (r.f.) magnetron sputtering using a Zr target in an atmosphere of O2/Ar gas mixture, were fabricated and the effects of the O2/Ar flow ratio in the reactive sputtering process, the annealing temperature, the ZrO2 film thickness on the structure,the surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si metal-oxide-semiconductor (MOS) capacitors were investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered-ZrO2 determined in such a way as the capacitance is maximized and the leakage current,the oxide charge, and the interface trap density are minimized that is the O2/Ar flow ratio of 1.5, the annealing temperature of 800℃, and the film thickness of 10 nm. Also the conduction mechanism in the Pt/ZrO2/Si capacitor has been discussed.
%K ZrO2
%K Gate dielectrics
%K Radio frequency
%K Magnetron sputtering<br>Pt/ZrO2/Si电容器
%K 射频磁控管溅射法
%K 栅极介质
%K 电气性质
%K 氧化锆
%K 铂
%K 硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=EC39863B8E843C099A94E4F14B0B230A&yid=37904DC365DD7266&vid=BC12EA701C895178&iid=B31275AF3241DB2D&sid=4FBF7A066D63EF1A&eid=4A2C67480A6B9F95&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=11