%0 Journal Article
%T Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction
%A Wenhua SHI
%A Lei ZHAO
%A Liping LUO
%A Qiming WANG
%A <br>Wenhua
%A SHI
%A Lei
%A ZHAO
%A Liping
%A LUO
%A Qiming
%A WANG
%J 材料科学技术学报
%D 2007
%I 
%X The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction (DCXRD) pattern. It is found that the width of the 0th peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge (GeSi actually) layer, which make the width of the 0th peak narrow after annealing.
%K X-ray diffraction
%K GeSi
%K Nano-dots
%K Annealing
%K Island<br>Ge纳米岛多层结构
%K Ge-Si原子
%K 相互扩散
%K X线衍射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=68FCD4A761A61EA0&yid=A732AF04DDA03BB3&vid=EA389574707BDED3&iid=38B194292C032A66&sid=DFEE4E8C33C95CEF&eid=358F98408588E522&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=15