%0 Journal Article
%T Reactive Magnetron Sputtering of CN_x Thin Films on β-Si_3N_4 Substrates
%J 材料科学技术学报
%D 1998
%I 
%X Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=9B6987146A076460&yid=8CAA3A429E3EA654&vid=F3583C8E78166B9E&iid=38B194292C032A66&sid=1A363081E1FF7014&eid=4E6F5C60B72D9B1C&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=0