%0 Journal Article
%T Current Progress of Hf (Zr)-Based High-k Gate Dielectric Thin Films<br>Current Progress of Hf （Zr）-Based High-k Gate Dielectric Thin Films
%A Gang HE
%A Lide ZHANG
%A <br>Gang
%A HE
%A Lide
%A ZHANG
%J 材料科学技术学报
%D 2007
%I 
%X With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investigated. Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr)-based high-k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf (Zr)-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.
%K Hf (Zr)-based high-k gate dielectric
%K PVD
%K Optical properties<br>材料科学技术学报
%K 镀膜设备
%K 低维功能材料
%K 金属氧化物半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=2BB33D9139F5BDD9&yid=A732AF04DDA03BB3&vid=EA389574707BDED3&iid=E158A972A605785F&sid=DDEED1BDDBFAA8A7&eid=A6683C8C0EB9BCA7&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=127