%0 Journal Article
%T Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering
%A Xianwu XIU
%A Zhiyong PANG
%A Maoshui LV
%A Ying DAI
%A Li''''na YE
%A Shenghao HAN
%A <br>Xianwu XIU
%A Zhiyong PANG
%A Maoshui LV
%A Ying DAI
%A Li′na YE
%A Shenghao HAN
%J 材料科学技术学报
%D 2007
%I 
%X Transparent conducting oxide film of molybdenum-doped zinc oxide (MZO) with high transparency and relatively low resistivity was prepared by RF (radio frequency) magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD (X-ray diffraction) patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.
%K Zinc oxide
%K Magnetron sputtering
%K Ar pressure<br>锌氧化物
%K 磁控管溅射
%K 氩压强
%K 含氧化氢杂质钼薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=F1839B40C8AE1F677C26CE4E112F0799&yid=A732AF04DDA03BB3&vid=EA389574707BDED3&iid=E158A972A605785F&sid=4ECB3941871FD391&eid=D8AE57480552698F&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=22