%0 Journal Article
%T Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si1-xGex Layer Epitaxied on Si Substrate
%A Lei ZHAO
%A Yuhua ZUO
%A Buwen CHENG
%A Jinzhong YU
%A Qiming WANG
%A <br>Lei
%A ZHAO
%A Yuhua
%A ZUO
%A Buwen
%A CHENG
%A Jinzhong
%A YU
%A Qiming
%A WANG
%J 材料科学技术学报
%D 2006
%I 
%X It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction(DCXRD)and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.
%K Si1-xGex
%K Ge content
%K Composition determination
%K Double crystals X-ray diffraction(DCXRD)
%K Micro-Raman measurement<br>双结晶X-射线衍射法
%K 微拉曼测量法
%K 硅
%K 锗
%K 成分测定
%K 晶体外延生长
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=868A172B9E694650BD7424C99BB53460&yid=37904DC365DD7266&vid=BC12EA701C895178&iid=94C357A881DFC066&sid=7004BE6E41AAF52C&eid=BBA8B1249CDAA6CE&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=18