%0 Journal Article
%T DISCUSSIONS ON THE NEW CONCEPTION OF DEPTH OF FOCUS IN LASER LITHOGRAPHY<br>激光光刻中焦深概念的新探讨
%A Shen Yibing
%A Yang Guoguang
%A Hou Xiyun State Key Laboratory of Modern Optical Instrumentation
%A Zhejiang University
%A Hangzhou Received date:--
%A <br>沈亦兵
%A 杨国光
%J 光子学报
%D 1998
%I 
%X The smallest linewidth and line verge dipangle are directly affected by the depth of focus(DOF)in laser lithography and thus the quality of the elements produced by the laser lithography will be changed.The traditional concept of DOF in geometric optics in no more suitable for laser lithography.In this paper the light intensity distribution in the photoresist for laser lithography was derived out on the approximate assumption.According to this,the resolution of lithographic line in photoresist and DOF can by estimated and further a new conception of DOF was raised out.
%K Depth of focus
%K Micro
%K lithography<br>激光直写
%K 微光刻
%K 焦深
%K 集成电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=F7D6EACFBF464A49E658C92A3D910AC1&yid=8CAA3A429E3EA654&vid=DB817633AA4F79B9&iid=F3090AE9B60B7ED1&sid=38DB5AF4AD8FDCCA&eid=2DEC3FE1EFC628C2&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=2