%0 Journal Article
%T Conductivity Properties of Phosphorus-doped Hydrogenated Nanocrystalline Silicon Film
%A Ming LIU
%A Dongfeng FU
%A Zhou WANG
%A Yingcai PENG
%A Yuliang HE
%A <br>
%J 材料科学技术学报
%D 1999
%I 
%X 1-IntroductionInordert0applythehydr0genatednan0crys-tallineSifilm(nc-Si:H)t0futureelectricaldevices,itisnecessarytofurtherimproveitselectricproperties.Accordingt0aSi:Hdopingtechnique,thedepositionofnc-Si:P:Hfilmwasstudiedandprimaryresults0fconductivityarerep0rted.2.ExperimentalAfterexperiments,followingparameterswerechosent0dep0sitnc-Si:P:Hfilms.Thegaseousphosphorus-dopingc0ncentrati0n(PH3/SiH4)is10-`~1;dilutionratio0fsaline(SiH4/H2)is0.1%~1%,substratetemperatureisfrom15O"Cto250"C.Th…
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=DDE6C9B0F6A8717A7D76C328AD6E982E&yid=B914830F5B1D1078&vid=23CCDDCD68FFCC2F&iid=E158A972A605785F&sid=B54EB62E9D3FF31E&eid=B54EB62E9D3FF31E&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=0