%0 Journal Article
%T A New hcp Phase Formed in the Ni-Nb System during Ion-beam-assisted Deposition
%A Bin ZHAO
%A Kuiwei GENG
%A Fei ZENG
%A Feng PAN
%A <br>Bin ZHAO
%A Kuiwei GENG
%A Fei ZENG and Feng PAN Laboratory of Advanced Materials
%J 材料科学技术学报
%D 2004
%I 
%X The NisoNb2o films were prepared by ion beam assisted deposition (IBAD)with various Ar ion energies. A phase evolution of fcc→amorphous→Ni Nb→Ni hcp was observed with the increasing of ion beam energy from 2 kev to 8 keV. When bombarded by Ar ions of 8 kev during deposition, a new crystalline phase with hcp structure was obtained, of which the lattice parameters are α=0.286 nm and c=0.483 nm, different from those of the similar A3B-type hcp phase previously reported. The experimental results were discussed in terms of thermodynamics and restricted kinetic conditions in the far-from-equilibrium process of IBAD. The formation of hcp phase may also be related to the valence electron effect.
%K Hcp phase
%K Ni-Nb
%K Ion beam assisted deposition
%K Thermodynamics
%K Valence electron effect<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=4E6BE2F5850733E2&yid=D0E58B75BFD8E51C&vid=A04140E723CB732E&iid=94C357A881DFC066&sid=52B9DFFFCC2EB041&eid=57EA20F731155703&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=19