%0 Journal Article
%T Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation
%A XBTian
%A LPWang
%A DTKKwok
%A BYTang
%A PKChu
%A <br>
%J 材料科学技术学报
%D 2001
%I 
%X Plasma immersion ion implantation (PIII) is an excellent technique for the surf see modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the process and cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=9DDA35FB6CBAE9B9&yid=14E7EF987E4155E6&vid=BCA2697F357F2001&iid=CA4FD0336C81A37A&sid=2001E0D53B7B80EC&eid=ECE8E54D6034F642&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=0