%0 Journal Article
%T RESEARCH ON THE PROPERTIES OF PECVD Si3N4/InP INTERFACE<br>PECVD Si3N4／InP界面特性的研究
%A Li Xiangmin
%A Wang Cunrang
%A Cheng Jun
%A Hou Xun
%A Liu Ying
%A <br>李相民
%A 王存让
%J 光子学报
%D 1994
%I 
%X The properties of PECVD Si3 N4/InPinterface were studied usingAugerElectron Spectrum and C-Vmeasurements. As shows that inter-diffusion at Si3 N4/InPinterface is caused after heat-treatment and element is found on the surface offilm.C-Vcurve of Ag/Si3N4 /InP MIS structure shows accumulation. depletion and in-versionregions.
%K AES
%K PECVD:Si3N4:intefece<br>界面
%K 氮化硅
%K 磷化铟
%K 光电阴极
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=25AC9E19CB49758E7B3BF0883BBA7661&yid=3EBE383EEA0A6494&vid=EA389574707BDED3&iid=0B39A22176CE99FB&sid=12DC19455C3A2FA8&eid=3986B25773CB6C30&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=1