%0 Journal Article
%T ELECTRONIC PROPERTIS OF Y-DOPED AMORPHOUS SILICON<br>掺钇非晶硅的电特性
%A CHENG Xingkui
%A <br>程兴奎
%J 材料研究学报
%D 1997
%I 
%X A new n-type amorphous silicon material, which is prepared by doping with Yttrium by r.f.sputtering, has been obtained. Temperature dependence of conductivity for several samlpes containing different concentration of Y shows that, as the concentration of
%K sputtering Y-doped amorphoussilicon eletronic properties<br>溅射
%K 掺Y
%K 非晶硅
%K 电特性
%K 硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=C2EF35D8CF50C417&yid=5370399DC954B911&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=D2742EEE6F4DF8FE&eid=1B64850025D0BBBE&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=0&reference_num=1