%0 Journal Article
%T Interfacial Electronic Structure of Thin Cu Films Grown on Ar+-ion Sputter-cleaned a-Al2O3 Substrates<br>Interfacial Electronic Structure of Thin Cu Films Grown on Ar^＋—ion Sputter—cleaned α—Al2O3 Substrates
%A Christina Scheu
%A Min Gao
%A <br>Christina Scheu
%A Min Gao
%A Manfred Rühle
%J 材料科学技术学报
%D 2002
%I 
%X The bonding and electronic structure of Cu/(0001)Al2O3 and Cu/(1120)Al2O3 interfaces has been studied experimentally using spatially-resolved transmission electron energy loss spectroscopy. The specimen were prepared by depositing Cu on single-crystal α-Al2O3 substrates, which have been Ar+-ion sputter-cleaned prior to the growth of Cu. For both orientations of the α-Al2O3 substrate, atomically abrupt interfaces formed as determined by highresolution transmission electron microscopy. The investigations of the interfacial Cu-L2,3, AI-L2,3 and O-K energy loss near-edge structures, which are proportional to the site- and angular-momentum-projected unoccupied density of states above the Fermi level, indicate the existence of metallic Cu-AI bonds at the Cu/AI2O3 interface independent of the substrate orientation.
%K Electronic structure
%K Cu film
%K Ion sputtering<br>氧化铝基底
%K 铜薄膜
%K 薄膜生长
%K 电子结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=34FEF98F5BF1CAB7F086A606047CC4E2&yid=C3ACC247184A22C1&vid=13553B2D12F347E8&iid=0B39A22176CE99FB&sid=7555FB9CC973F695&eid=2B5DE8A23DCEED39&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=0