%0 Journal Article
%T PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING<br>直流反应磁控溅射法淀积ZrN薄膜
%A WU Dawei
%A ZHANG Zhihong
%A LUO Hailin
%A GUO Huaixi
%A FAN Xiangjun
%A <br>吴大维
%A 张志宏
%A 罗海林
%A 郭怀喜
%A 范湘军
%J 材料研究学报
%D 1997
%I 
%X ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditi
%K Zirconium nitride film DC reactive magnetron sputtering epitaxial growth film
%K resistance material<br>薄膜
%K 反应磁控溅射
%K 外延生长
%K 氮化锆
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=5ACD8AB24ADD55EDD29FB0BD5A46B094&yid=5370399DC954B911&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=334E2BB8B9A55ABB&eid=3D9746C06EC12B45&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=3&reference_num=0