%0 Journal Article
%T Beryllium Surface Modified by B Ion Implantation
%A HU Renyuan YANG Yushi Institute of Low Energy Physics
%A Beijing Normal University
%A China Beijing Research Institute of Materials
%A Technology
%A China
%A <br>胡仁元
%A 杨玉石
%J 材料科学技术学报
%D 1989
%I 
%X Beryllium is implanted with 100 keV,2×10~(17) B/cm~2 and post-implanted sample isannealed at 650℃ for 1 h.Hardness measurementindicates that the hardness increases withimplantation and can further be modified bypost-implantation heat treatment.Profile measurement shows that implantationcauses contamination on the surface of beryllium.During annealing boron diffuses out of berylliumand carbon on surface diffuses into beryllium.Beryllium surface is modified by compositionchange and carbide formation.
%K ion implantation
%K beryllium
%K diffusion<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=DCD0737ED6924BE0&yid=1833A6AA51F779C1&vid=94C357A881DFC066&iid=38B194292C032A66&sid=8575BEDA702C4B7C&eid=D5C9DC4EF2F78008&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=0