%0 Journal Article
%T Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere
%A LI Wenchao FAN Zishuan SUN Guiru QIN Fu University of Science
%A Technology of Beijing
%A China General Research Institute for Nonferrous Metals
%A Beijing
%A China
%A <br>李文超
%A 樊自拴
%A 孙贵如
%A 秦福
%J 材料科学技术学报
%D 1989
%I 
%X 1. Introduction Thermal oxidation of silicon monocrystalis a very important process in fabricationof metal--oxide--semiconductor (MOS) devices.In recent years it has received great atten-tion. Various proposals for oxidation modeshave been made by different groups.Now most of the authors working in thisfield hold the view that the oxidation rateof silicon obeys a typical parabolic rule,that is, the oxidation reaction is controlledby diffusion. The experimental data inRef. can be taken and a kinetic curve
%K oxidation mechanism
%K silicon monocrystal
%K oxide film morphology<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=324DC3CAB22330DB19158AE0A9B7BFA5&aid=36C92026E6B7B293&yid=1833A6AA51F779C1&vid=94C357A881DFC066&iid=94C357A881DFC066&sid=FA3423FC1AE95C4E&eid=683005D16807E4FE&journal_id=1005-0302&journal_name=材料科学技术学报&referenced_num=0&reference_num=0