%0 Journal Article %T The effects of crystallization of SiO2 layers on the growth structure and mechanical properties of TiN/ SiO2 nanomultilayers
SiO2层晶化对TiN/SiO2纳米多层膜结构和性能的影响 %A WEI Lun %A SHAO Nan %A MEI Fanghua %A LI Geyang %A
魏仑 %A 邵楠 %A 梅芳华 %A 李戈扬 %J 材料研究学报 %D 2005 %I %X Superhard and oxide-composed multilayered coatings are promising for cutting tools working under extreme conditions. In this paper, TilM/SiO2 nanomultilayers with different SiO2 layer thicknesses have been prepared by multi-target magnetron sputtering method. The growth, structure and mechanical properties of the nanomultilayers have been studied by X-ray diffraction, energy dispersive X-ray spectrometry, scanning electron microscopy, high-resolution transmission electron microscopy and nanoindentation, respectively. The results reveal that amorphous SiO2 which is more favorable under sputtering condition crystallizes at smaller SiO2 layer thickness (0.45-0.9 nm) due to the template effect of TiN layers, and multilayers exhibit coherent epitaxial growth with intensive (111) texture. Correspondingly, the multilayers show anomalous enhancement in hardness and elastic modu- lus, and the maximum hardness reaches 45 GPa. At larger layers thickness (>-1 nm), however, SiO2 layers form amorphous structure and block the coherent growth of multilayers, resulting in a layered structure that consists of amorphous SiO2 and nanocrystalline TiN layers. The hardness and elastic modulus decrease gradually with increasing SiO2 layers thickness. %K inorganic non-metallic materials %K TiN/SiO2 nanomultilayers %K epitaxial growth %K forced crystallization of amorphous %K superhardness
无机非金属材料 %K TiN/SiO2纳米多层膜 %K 外延生长 %K 非晶晶化 %K 超硬效应 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=84529CA2B2E519AC&jid=C101C4C04993B4D94FCD8446E6CBEB3B&aid=F14FF3A7EBF7DE75&yid=2DD7160C83D0ACED&vid=2A8D03AD8076A2E3&iid=94C357A881DFC066&sid=2B25C5E62F83A049&eid=D8B37A0210DB6B9D&journal_id=1005-3093&journal_name=材料研究学报&referenced_num=0&reference_num=20