%0 Journal Article
%T A 1100+V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination<br>
%A CAO Dong-Sheng
%A LU Hai
%A CHEN Dun-Jun
%A HAN Ping
%A ZHANG Rong
%A ZHENG You-Dou
%A <br>
%J 中国物理快报
%D 2011
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=3B792914E3370B8EADCDCADD6E5B5F99&yid=9377ED8094509821&vid=D3E34374A0D77D7F&iid=CA4FD0336C81A37A&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0