%0 Journal Article
%T A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator<br>
%A ZHOU Bin
%A WANG Jin-Yan
%A MENG Di
%A LIN Shu-Xun
%A FANG Min
%A DONG Zhi-Hua
%A YU Min
%A HAO Yi-Long
%A Cheng P WEN
%A <br>
%J 中国物理快报
%D 2011
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=2CF049F8B8CD371028F3FFAF1541DA05&yid=9377ED8094509821&vid=D3E34374A0D77D7F&iid=F3090AE9B60B7ED1&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0