%0 Journal Article
%T Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method<br>
%A XIA Xiao-Chuan
%A WANG Hui
%A ZHAO Yang
%A WANG Jin
%A ZHAO Jian-Ze
%A SHI Zhi-Feng
%A LI Xiang-Ping
%A LIANG Hong-Wei
%A ZHANG Bao-Lin
%A DU Guo-Tong
%A <br>
%J 中国物理快报
%D 2011
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=2CF049F8B8CD3710057CCBE9C448E348&yid=9377ED8094509821&vid=D3E34374A0D77D7F&iid=F3090AE9B60B7ED1&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0