%0 Journal Article
%T Design of a 1200-V Thin-Silicon-Layer p-Channel SOI LDMOS Device<br>
%A HU Sheng-Dong
%A ZHANG Ling
%A LUO Xiao-Rong
%A ZHANG Bo
%A LI Zhao-Ji
%A WU Li-Juan
%A <br>
%J 中国物理快报
%D 2011
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=C7561DFE5CDD047EB332639BAB7CDDEE&yid=9377ED8094509821&vid=D3E34374A0D77D7F&iid=59906B3B2830C2C5&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0