%0 Journal Article
%T Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering<br>
%A HUANG Hai-Qin
%A SUN Jian
%A LIU Feng-Juan
%A ZHAO Jian-Wei
%A HU Zuo-Fu
%A LI Zhen-Jun
%A ZHANG Xi-Qing
%A WANG Yong-Sheng
%A <br>
%J 中国物理快报
%D 2011
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=C7561DFE5CDD047E9D5810BB72B45CDA&yid=9377ED8094509821&vid=D3E34374A0D77D7F&iid=59906B3B2830C2C5&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0