%0 Journal Article
%T Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer
%A CHEN Jun
%A FAN Guang-Han
%A PANG-Wei
%A ZHENG Shu-Wen
%A
%J 中国物理快报
%D 2011
%I
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=C7561DFE5CDD047ED8F9743C544BCFE4&yid=9377ED8094509821&vid=D3E34374A0D77D7F&iid=59906B3B2830C2C5&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0