%0 Journal Article
%T Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate<br>
%A LIU Xu-Yan
%A LIU Wei-Li
%A MA Xiao-Bo
%A CHEN Chao
%A SONG Zhi-Tang
%A LIN Cheng-Lu
%A <br>
%J 中国物理快报
%D 2009
%I 
%X Ultra-thin and near-fully relaxed SiGe substrate is fabricated using a modified Ge condensation technique, and then a 25-nm-thick biaxially tensile strained-Si with a low rms roughness is epitaxially deposited on a SiGe-on-Insulator (SGOI) substrate by ultra high vacuum chemical vapor deposition (UHVCVD). High-Resolution cross-sectional transmission electron microscope (HR-XTEM) observations reveal that the strained-Si/SiGe layer is dislocation-free and the atoms at the interface are well aligned. Furthermore, secondary ion mass spectrometry (SIMS) results show a sharp interface between layers and a uniform distribution of Ge in the SiGe layer. One percent in-plane tensile strain in the strained-Si layer is confirmed by ultraviolet (UV) Raman spectra,and the stress maintained even after a 30-s rapid thermal annealing (RTA) process at 1000°C. According to those results, devices based on strained-Si are expected to have a better performance than the conventional ones.
%K 68
%K 55
%K Ag
%K 81
%K 15
%K -z
%K 68
%K 37
%K Lp<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=CFAE4D4AEE23C7F921261D7DE4A91BF5&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=708DD6B15D2464E8&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0