%0 Journal Article
%T Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition<br>
%A CUI Xu-Gao
%A ZHANG Rong
%A TAO Zhi-Kuo
%A LI Xin
%A XIU Xiang-Qian
%A XIE Zi-Li
%A ZHENG You-Dou
%A <br>
%J 中国物理快报
%D 2009
%I 
%X Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD). Micro-structural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1(LO) of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.
%K 81
%K 15
%K Gh
%K 81
%K 05
%K Ea<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=6EB46117043512B0AEF4151BA62EE8AA&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=38B194292C032A66&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0