%0 Journal Article
%T Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers<br>
%A XU Zhang-Cheng
%A ZHANG Ya-Ting
%A J
%A rn M Hvam
%A Yoshiji Horikoshi
%A <br>
%J 中国物理快报
%D 2009
%I 
%X The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant F rster energy transfer between the wetting layer states at elevated temperatures.
%K 73
%K 63
%K Kv
%K 78
%K 67
%K -n
%K 78
%K 55
%K Cr
%K 73
%K 40
%K Gk
%K 78
%K 55
%K -m<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=5141670818AF4C3EC50728345D6D50C9&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=94C357A881DFC066&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0