%0 Journal Article
%T Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor<br>
%A LI Qi
%A WANG Wei-Dong
%A LIU Yun
%A WEI Xue-Ming
%A <br>
%J 中国物理快报
%D 2012
%I 
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=3B8BF30E16FD5CB00214D8C95176AB1E&yid=99E9153A83D4CB11&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0