%0 Journal Article
%T Interface Evolution of TiN/Poly Si as Gate Material on Si/HfO2 Stack<br>
%A JIANG Ran
%A YAO Li-Ting
%A <br>
%J 中国物理快报
%D 2008
%I 
%X TiN as gate electrode in Si/HfO2/TiN/poly-Si stack is evaluated after the postmetal annealing treatments. Interface reactions are investigated usingelectron-energy-loss spectroscopy and x-ray photoelectron spectroscopy. The work function of the TiN/poly-Si stack shows strong dependence on the postmetal deposition annealing conditions. The interfacial product in TiN/poly-Si interface is inferred as TiSiN, which is beneficial for the whole high-k stack since TiSiN possesses higher work function compared to TiN and poly-Si.
%K 71
%K 55
%K Ak
%K 71
%K 70
%K Gm
%K 77
%K 55
%K +f<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=E56E76275B6259FEFBDAAEAD37C87FD1&yid=67289AFF6305E306&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=FFE181911AE93FD6&eid=4AFA67525584BD90&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0