%0 Journal Article
%T Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process<br>
%A SUN Bing
%A LIU Li-Feng
%A HAN De-Dong
%A WANG Yi
%A LIU Xiao-Yan
%A HAN Ru-Qi
%A KANG Jin-Feng
%A <br>
%J 中国物理快报
%D 2008
%I 
%X Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO2 devices. The improved resistive switching behaviour in the Ag doped ZrO2 devices could be attributed to Ag doping effect on the formation of the stablefilamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage.
%K 71
%K 30
%K +h
%K 77
%K 55
%K +f<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=A59D96C2A9AA63A7657D23B0EB18CDE7&yid=67289AFF6305E306&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=5BE42E3678D12170&eid=4B5EFEE8F5D7C671&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0