%0 Journal Article
%T Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions<br>
%A CHEN Lei-Ming
%A LI Guang-Cheng
%A ZHANG Yan
%A GUO Yan-Feng
%A <br>
%J 中国物理快报
%D 2010
%I 
%X In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 (LSCO) films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness. Vd-on and TC coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin (<350 nm) a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Schottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.
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%K Fk
%K 74
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%K -h<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=092CDC0BB144DD67E555DC832A9D8F3F&yid=140ECF96957D60B2&vid=DB817633AA4F79B9&iid=DF92D298D3FF1E6E&sid=D537C66B6404FE57&eid=10828928EB89AD8E&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=22