%0 Journal Article
%T Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric<br>
%A YANG Lu
%A <br>
%J 中国物理快报
%D 2010
%I 
%X Deep-trap properties of high-dielectric-constant (k) HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500 K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5 eV, 1.8× 10-16 cm2 and 1.0× 1016 cm-3, respectively.
%K 71
%K 10
%K Ca
%K 71
%K 15
%K Qe
%K 77&prev_q=')"> 77" target="_blank">')"> 77
%K 22
%K Ch<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=384D1686361505F4AAC9B860D915CCD4&yid=140ECF96957D60B2&vid=DB817633AA4F79B9&iid=DF92D298D3FF1E6E&sid=AD16A18DBD734D13&eid=1D67BE204FBF4800&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=9