%0 Journal Article
%T Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application<br>
%A WANG Xiang
%A HUANG Jian
%A DING Hong-Lin
%A ZHANG Xian-Gao
%A YU Lin-Wei
%A HUANG Xin-Fan
%A LI Wei
%A CHEN Kun-Ji
%A <br>
%J 中国物理快报
%D 2008
%I 
%X An a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition (PECVD) system at low temperature (250°C). The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2×1011cm-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNx insulator layer are obtained. The density of interface state at the midgap is calculated to be 1×1010cm-2eV-1 from the quasistatic and high frequency C-V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage (C-V) measurement at room temperature. Anultra-large hysteresis is observed in the C-V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.
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%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=0B299D936EC7EBC38DFB1F033623DCAF&yid=67289AFF6305E306&vid=C5154311167311FE&iid=DF92D298D3FF1E6E&sid=5B0AFEF9BB2761AD&eid=349E8AF2BCA314C4&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0