%0 Journal Article
%T Demonstration of GaN/InGaN Light Emitting Diodes on (100) β-Ga2O3 Substrates by Metalorganic Chemical Vapour Deposition
%J 中国物理快报
%D 2008
%I 
%X The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes (LEDs) on (100) β-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) θ-2θ scan spectroscopy is carried out on the GaN buffer layer grown on a (100) β-Ga2O3 substrate. The spectrum presents several sharppeaks corresponding to the (100) β-Ga2O3 and (004) GaN. High-quality (0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on β-Ga2O3 with vertical current injection is demonstrated.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=E7FEA455D3B7F4E2DD2DF03EBE4FEE30&yid=67289AFF6305E306&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=6706B133F8421241&eid=5D16F3E1BCE7CF8E&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0