%0 Journal Article
%T Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr0.6TiO3 Dielectric<br>
%A WANG Li-Ping
%A LU Ai-Xia
%A DOU Wei
%A WAN Qing
%A <br>
%J 中国物理快报
%D 2010
%I 
%K 85
%K 30
%K Tv
%K 77&prev_q=')"> 77" target="_blank">')"> 77
%K 55
%K +f<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=AFA096ED3C06384C160BCF8DFF784877&yid=140ECF96957D60B2&vid=DB817633AA4F79B9&iid=DF92D298D3FF1E6E&sid=B8F8200D88DDC7D6&eid=EBD6B792C9111B87&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=17