%0 Journal Article
%T Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment<br>
%A WANG Xiang-Hu
%A YAO Bin
%A WEI Zhi-Peng
%A SHEN De-Zhen
%A ZHANG Zhen-Zhong
%A LU You-Ming
%A ZHANG Ji-Ying
%A FAN Xi-Wu
%A <br>
%J 中国物理快报
%D 2008
%I 
%X The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N2 are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O2. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N2)O to the N atom number on O site (NO) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N2, the percentage content of (N2)O is larger than that of NO, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O2, the percentage content of (N2)O is fewer than that of NO, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N2 and that of ZnO:N film annealed in O2. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N2, this emission band is due to donor-bound exciton (D0X). After annealed in O2, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A0X).
%K 71
%K 55
%K Gs
%K 78
%K 20
%K Ek<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=3096DE0361468952C6C5A05A427292B4&yid=67289AFF6305E306&vid=C5154311167311FE&iid=5D311CA918CA9A03&sid=D413BE4FEC26716F&eid=5CE0B7DA014A4F57&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0